# GAA FETs

Published articles for GAA FETs.

This is one page of public article previews, not the complete archive. Follow Next page to continue. Summaries are not the original full articles.

## Virtual Fabrication Meets Stress Physics: Solving GAA Channel Non-Uniformity

DevFeed: [Virtual Fabrication Meets Stress Physics: Solving GAA Channel Non-Uniformity](<https://devfeed.tech/articles/virtual-fabrication-meets-stress-physics-solving-gaa-channel-non-uniformity-52608.md>)

Original publisher: [Read original article](<https://semiengineering.com/virtual-fabrication-meets-stress-physics-solving-gaa-channel-non-uniformity/>)

Author: Swapnil Kailash More

Published: 2026-09-17T07:04:20Z

Content type: article

Language: en

Sources: [Semiconductor Engineering](<https://devfeed.tech/sources/semiconductor-engineering.md>)

Topics: [Simulation and Design](<https://devfeed.tech/topics/simulation-and-design.md>), [Optimization](<https://devfeed.tech/topics/optimization.md>)

Tags: [blogs-md](<https://devfeed.tech/tags/blogs-md.md>), [channel-width](<https://devfeed.tech/tags/channel-width.md>), [engineering](<https://devfeed.tech/tags/engineering.md>), [etch](<https://devfeed.tech/tags/etch.md>), [gaa-fets](<https://devfeed.tech/tags/gaa-fets.md>), [gate-all-around](<https://devfeed.tech/tags/gate-all-around.md>), [lam-research](<https://devfeed.tech/tags/lam-research.md>), [manufacturing-packaging-and-materials](<https://devfeed.tech/tags/manufacturing-packaging-and-materials.md>), [mechanical-stress](<https://devfeed.tech/tags/mechanical-stress.md>), [nanosheets](<https://devfeed.tech/tags/nanosheets.md>), [perfecting-the-process](<https://devfeed.tech/tags/perfecting-the-process.md>), [physics](<https://devfeed.tech/tags/physics.md>), [process-modeling](<https://devfeed.tech/tags/process-modeling.md>), [semiconductor](<https://devfeed.tech/tags/semiconductor.md>), [semiconductor-manufacturing](<https://devfeed.tech/tags/semiconductor-manufacturing.md>), [virtual-fabrication](<https://devfeed.tech/tags/virtual-fabrication.md>)

### AI overview

The article explains how non-uniform mechanical stress across stacked nanosheet channels in gate-all-around transistors affects carrier mobility, current flow, threshold voltage, and leakage. It describes using SEMulator3D stress modeling to identify process variations and optimize channel thickness, fin width, and lateral etch, including a finding that a slightly thicker top channel improves stress uniformity.

### Source excerpt

Even small imbalances between stacked nanosheets can distort device behavior in ways that are difficult to predict from geometry alone. The post Virtual Fabrication Meets Stress Physics: Solving GAA Channel Non-Uniformity appeared first on Semiconductor Engineering.