# gain-cell memory

Published articles for gain-cell memory.

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## Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel)

DevFeed: [Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel)](<https://devfeed.tech/articles/nanoelectromechanical-switches-target-more-efficient-embedded-dram-uc-berkeley-samsung-intel-89819.md>)

Original publisher: [Read original article](<https://semiengineering.com/nanoelectromechanical-switches-target-more-efficient-embedded-dram-uc-berkeley-samsung-intel/>)

Author: Technical Paper Link

Published: 2026-10-18T23:28:31Z

Content type: news

Language: en

Sources: [Semiconductor Engineering](<https://devfeed.tech/sources/semiconductor-engineering.md>)

Topics: [DRAM price increase](<https://devfeed.tech/topics/dram-price-increase.md>), [intel](<https://devfeed.tech/topics/intel.md>), [Raspberry Pi RP2350](<https://devfeed.tech/topics/raspberry-pi-rp2350.md>)

Tags: [berkeley](<https://devfeed.tech/tags/berkeley.md>), [dram](<https://devfeed.tech/tags/dram.md>), [edram](<https://devfeed.tech/tags/edram.md>), [efficiency](<https://devfeed.tech/tags/efficiency.md>), [embedded-dram](<https://devfeed.tech/tags/embedded-dram.md>), [embedded-memory](<https://devfeed.tech/tags/embedded-memory.md>), [energy](<https://devfeed.tech/tags/energy.md>), [engineering](<https://devfeed.tech/tags/engineering.md>), [gain-cell-edram](<https://devfeed.tech/tags/gain-cell-edram.md>), [gain-cell-memory](<https://devfeed.tech/tags/gain-cell-memory.md>), [high-density](<https://devfeed.tech/tags/high-density.md>), [hybrid-cmos-nem](<https://devfeed.tech/tags/hybrid-cmos-nem.md>), [hybrid-gain-cells](<https://devfeed.tech/tags/hybrid-gain-cells.md>), [intel](<https://devfeed.tech/tags/intel.md>), [low-power-memory](<https://devfeed.tech/tags/low-power-memory.md>), [memory](<https://devfeed.tech/tags/memory.md>), [memory-scaling](<https://devfeed.tech/tags/memory-scaling.md>), [memory-wall](<https://devfeed.tech/tags/memory-wall.md>), [nanoelectromechanical-switches](<https://devfeed.tech/tags/nanoelectromechanical-switches.md>), [nanoelectromechanical-systems](<https://devfeed.tech/tags/nanoelectromechanical-systems.md>), [nem-switches](<https://devfeed.tech/tags/nem-switches.md>), [nems](<https://devfeed.tech/tags/nems.md>), [power-performance](<https://devfeed.tech/tags/power-performance.md>), [samsung](<https://devfeed.tech/tags/samsung.md>), [samsung-electronics](<https://devfeed.tech/tags/samsung-electronics.md>), [scaling](<https://devfeed.tech/tags/scaling.md>), [semiconductor](<https://devfeed.tech/tags/semiconductor.md>), [semiconductor-engineering](<https://devfeed.tech/tags/semiconductor-engineering.md>), [sram](<https://devfeed.tech/tags/sram.md>), [switches](<https://devfeed.tech/tags/switches.md>), [technical-papers](<https://devfeed.tech/tags/technical-papers.md>), [transistors](<https://devfeed.tech/tags/transistors.md>), [uc-berkeley](<https://devfeed.tech/tags/uc-berkeley.md>), [university-of-california](<https://devfeed.tech/tags/university-of-california.md>)

### AI overview

Researchers from UC Berkeley, Samsung Electronics, and Intel published a paper introducing a nanoelectromechanically gated gain cell for embedded DRAM. The excerpt identifies limited retention, parasitic coupling, and boosted write voltages as challenges for gain-cell eDRAM, which offers high density and energy efficiency. The supplied text does not include further details about the proposed design or its results.

### Source excerpt

Researchers at the UC Berkeley, Samsung Electronics, and Intel published "Nanoelectromechanically Gated Gain Cell eDRAM." Abstract Excerpt: "The memory wall and the slowdown of static random access memory (SRAM) scaling have renewed interest in gain-cell embedded dynamic random access memory (DRAM). While gain cells offer high density and energy efficiency, they suffer from limited retention,... " read more The post Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel) appeared first on Semiconductor Engineering.