# nanoelectromechanical systems

Published articles for nanoelectromechanical systems.

This is one page of public article previews, not the complete archive. Follow Next page to continue. Summaries are not the original full articles.

## Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel)

DevFeed: [Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel)](<https://devfeed.tech/articles/nanoelectromechanical-switches-target-more-efficient-embedded-dram-uc-berkeley-samsung-intel-89819.md>)

Original publisher: [Read original article](<https://semiengineering.com/nanoelectromechanical-switches-target-more-efficient-embedded-dram-uc-berkeley-samsung-intel/>)

Author: Technical Paper Link

Published: 2026-10-18T23:28:31Z

Content type: news

Language: en

Sources: [Semiconductor Engineering](<https://devfeed.tech/sources/semiconductor-engineering.md>)

Topics: [DRAM price increase](<https://devfeed.tech/topics/dram-price-increase.md>), [intel](<https://devfeed.tech/topics/intel.md>), [Raspberry Pi RP2350](<https://devfeed.tech/topics/raspberry-pi-rp2350.md>)

Tags: [berkeley](<https://devfeed.tech/tags/berkeley.md>), [dram](<https://devfeed.tech/tags/dram.md>), [edram](<https://devfeed.tech/tags/edram.md>), [efficiency](<https://devfeed.tech/tags/efficiency.md>), [embedded-dram](<https://devfeed.tech/tags/embedded-dram.md>), [embedded-memory](<https://devfeed.tech/tags/embedded-memory.md>), [energy](<https://devfeed.tech/tags/energy.md>), [engineering](<https://devfeed.tech/tags/engineering.md>), [gain-cell-edram](<https://devfeed.tech/tags/gain-cell-edram.md>), [gain-cell-memory](<https://devfeed.tech/tags/gain-cell-memory.md>), [high-density](<https://devfeed.tech/tags/high-density.md>), [hybrid-cmos-nem](<https://devfeed.tech/tags/hybrid-cmos-nem.md>), [hybrid-gain-cells](<https://devfeed.tech/tags/hybrid-gain-cells.md>), [intel](<https://devfeed.tech/tags/intel.md>), [low-power-memory](<https://devfeed.tech/tags/low-power-memory.md>), [memory](<https://devfeed.tech/tags/memory.md>), [memory-scaling](<https://devfeed.tech/tags/memory-scaling.md>), [memory-wall](<https://devfeed.tech/tags/memory-wall.md>), [nanoelectromechanical-switches](<https://devfeed.tech/tags/nanoelectromechanical-switches.md>), [nanoelectromechanical-systems](<https://devfeed.tech/tags/nanoelectromechanical-systems.md>), [nem-switches](<https://devfeed.tech/tags/nem-switches.md>), [nems](<https://devfeed.tech/tags/nems.md>), [power-performance](<https://devfeed.tech/tags/power-performance.md>), [samsung](<https://devfeed.tech/tags/samsung.md>), [samsung-electronics](<https://devfeed.tech/tags/samsung-electronics.md>), [scaling](<https://devfeed.tech/tags/scaling.md>), [semiconductor](<https://devfeed.tech/tags/semiconductor.md>), [semiconductor-engineering](<https://devfeed.tech/tags/semiconductor-engineering.md>), [sram](<https://devfeed.tech/tags/sram.md>), [switches](<https://devfeed.tech/tags/switches.md>), [technical-papers](<https://devfeed.tech/tags/technical-papers.md>), [transistors](<https://devfeed.tech/tags/transistors.md>), [uc-berkeley](<https://devfeed.tech/tags/uc-berkeley.md>), [university-of-california](<https://devfeed.tech/tags/university-of-california.md>)

### AI overview

Researchers from UC Berkeley, Samsung Electronics, and Intel published a paper introducing a nanoelectromechanically gated gain cell for embedded DRAM. The excerpt identifies limited retention, parasitic coupling, and boosted write voltages as challenges for gain-cell eDRAM, which offers high density and energy efficiency. The supplied text does not include further details about the proposed design or its results.

### Source excerpt

Researchers at the UC Berkeley, Samsung Electronics, and Intel published "Nanoelectromechanically Gated Gain Cell eDRAM." Abstract Excerpt: "The memory wall and the slowdown of static random access memory (SRAM) scaling have renewed interest in gain-cell embedded dynamic random access memory (DRAM). While gain cells offer high density and energy efficiency, they suffer from limited retention,... " read more The post Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel) appeared first on Semiconductor Engineering.